STMicroelectronics, IGBT, 40 A 650 V, 3 Ben, TO-220 1
- RS-varenummer:
- 204-9876P
- Producentens varenummer:
- STGP20H65DFB2
- Brand:
- STMicroelectronics
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- RS-varenummer:
- 204-9876P
- Producentens varenummer:
- STGP20H65DFB2
- Brand:
- STMicroelectronics
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | STMicroelectronics | |
| Produkttype | IGBT | |
| Kollektorstrøm kontinuerlig maks. (Ic) | 40 A | |
| Kollektor emitter spænding maks. (Vceo) | 650 V | |
| Benantal | 3 | |
| Emballagetype | TO-220 | |
| Antal transistorer | 1 | |
| Portsenderspænding maks. | 20 V | |
| Vælg alle | ||
|---|---|---|
Brand STMicroelectronics | ||
Produkttype IGBT | ||
Kollektorstrøm kontinuerlig maks. (Ic) 40 A | ||
Kollektor emitter spænding maks. (Vceo) 650 V | ||
Benantal 3 | ||
Emballagetype TO-220 | ||
Antal transistorer 1 | ||
Portsenderspænding maks. 20 V | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance