onsemi Type N-Kanal, Effekt MOSFET, 19 A 650 V Forbedring, 3 Ben, TO-220, SUPERFET III Nej FCP165N65S3
- RS-varenummer:
- 178-4676
- Producentens varenummer:
- FCP165N65S3
- Brand:
- onsemi
Indhold (1 pakke af 5 enheder)*
Kr. 136,36
(ekskl. moms)
Kr. 170,45
(inkl. moms)
GRATIS levering for online ordrer over 500,00 kr.
Restlager hos RS
- Sidste 685 enhed(er), klar til afsendelse fra et alternativt lager
Enheder | Per stk. | Pr pakke* |
|---|---|---|
| 5 + | Kr. 27,272 | Kr. 136,36 |
*Vejledende pris
- RS-varenummer:
- 178-4676
- Producentens varenummer:
- FCP165N65S3
- Brand:
- onsemi
Egenskaber
Tekniske referencer
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Generel produktinformation
Find lignende produkter ved at vælge én eller flere attributter.
Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Produkttype | Effekt MOSFET | |
| Kanaltype | Type N | |
| Drain-strøm kontinuerlig maks. Id | 19A | |
| Drain source spænding maks. Vds | 650V | |
| Emballagetype | TO-220 | |
| Serie | SUPERFET III | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Drain source modstand maks. Rds | 165mΩ | |
| Kanalform | Forbedring | |
| Portkildespænding maks. | 30 V | |
| Effektafsættelse maks. Pd | 154W | |
| Gate-ladning ved Qg Vgs typisk | 39nC | |
| Gennemgangsspænding Vf | 1.2V | |
| Min. driftstemperatur | -55°C | |
| Driftstemperatur maks. | 150°C | |
| Standarder/godkendelser | RoHS, Pb-Free, Halide Free | |
| Bredde | 4.7 mm | |
| Højde | 16.3mm | |
| Længde | 10.67mm | |
| Bilindustristandarder | Nej | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Produkttype Effekt MOSFET | ||
Kanaltype Type N | ||
Drain-strøm kontinuerlig maks. Id 19A | ||
Drain source spænding maks. Vds 650V | ||
Emballagetype TO-220 | ||
Serie SUPERFET III | ||
Monteringstype Hulmontering | ||
Benantal 3 | ||
Drain source modstand maks. Rds 165mΩ | ||
Kanalform Forbedring | ||
Portkildespænding maks. 30 V | ||
Effektafsættelse maks. Pd 154W | ||
Gate-ladning ved Qg Vgs typisk 39nC | ||
Gennemgangsspænding Vf 1.2V | ||
Min. driftstemperatur -55°C | ||
Driftstemperatur maks. 150°C | ||
Standarder/godkendelser RoHS, Pb-Free, Halide Free | ||
Bredde 4.7 mm | ||
Højde 16.3mm | ||
Længde 10.67mm | ||
Bilindustristandarder Nej | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 39 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
Internal Gate Resistance: 4.6 Ω
Optimized Capacitance
Typ. RDS(on) = 140 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer
Game Console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
Relaterede links
- onsemi N-Kanal 19 A 650 V TO-220 FCP165N65S3
- onsemi N-Kanal 19 A 650 V TO-220, NTP165N65S NTP165N65S3H
- onsemi N-Kanal 19 A 650 V TO-220, SUPERFET III NTPF165N65S3H
- onsemi N-Kanal 36 A 650 V TO-220 NTP095N65S3HF
- onsemi N-Kanal 44 A 650 V TO-220 FCP067N65S3
- onsemi N-Kanal 30 A 650 V TO-220 NTP110N65S3HF
- onsemi N-Kanal 17 A 650 V TO-220 FCP190N65S3
- onsemi N-Kanal 20 A 650 V TO-220 NTPF190N65S3HF