Vishay N-Kanal, MOSFET, 200 mA 240 V Forbedring, 3 Ben, TO-236, TN2404K
- RS-varenummer:
- 180-8155P
- Producentens varenummer:
- TN2404K-T1-E3
- Brand:
- Vishay
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- RS-varenummer:
- 180-8155P
- Producentens varenummer:
- TN2404K-T1-E3
- Brand:
- Vishay
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | Vishay | |
| Kanaltype | N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 200 mA | |
| Drain source spænding maks. (Vds) | 240 V | |
| Kanalform | Forbedring | |
| Benantal | 3 | |
| Emballagetype | TO-236 | |
| Serie | TN2404K | |
| Bilindustristandarder | Nej | |
| Gennemgangsspænding (Vf) | 1.2 V | |
| Højde | 1.12 mm | |
| Længde | 3.04 mm | |
| Drain source modstand maks. (Rds) | 4 Ω | |
| Portkildespænding maks. | 20 V | |
| Driftstemperatur maks. | 150 °C | |
| Effektafsættelse maks. (Pd) | 0.36 W | |
| Min. driftstemperatur | -55 °C | |
| Monteringstype | Overflade | |
| Standarder/godkendelser | No | |
| Gate-ladning ved (Qg) Vgs typisk | 4.87 nC | |
| Bredde | 2.64 mm | |
| Vælg alle | ||
|---|---|---|
Brand Vishay | ||
Kanaltype N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 200 mA | ||
Drain source spænding maks. (Vds) 240 V | ||
Kanalform Forbedring | ||
Benantal 3 | ||
Emballagetype TO-236 | ||
Serie TN2404K | ||
Bilindustristandarder Nej | ||
Gennemgangsspænding (Vf) 1.2 V | ||
Højde 1.12 mm | ||
Længde 3.04 mm | ||
Drain source modstand maks. (Rds) 4 Ω | ||
Portkildespænding maks. 20 V | ||
Driftstemperatur maks. 150 °C | ||
Effektafsættelse maks. (Pd) 0.36 W | ||
Min. driftstemperatur -55 °C | ||
Monteringstype Overflade | ||
Standarder/godkendelser No | ||
Gate-ladning ved (Qg) Vgs typisk 4.87 nC | ||
Bredde 2.64 mm | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 240V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has a maximum power dissipation of 360mW and continuous drain current of 200mA. The minimum and a maximum driving voltage for this MOSFET is 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Easily driven without buffer
• Excellent thermal stability
• Full voltage operation
• Low error voltage
• Low input and output leakage
• Low offset voltage
• Low on resistance: 4ohms
• Low power/voltage driven
• Operating temperature ranges between -55°C and 150°C
• Secondary breakdown free: 260V
Applications
• High voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc
• Motor control
• Power supply, converters
• Telephone mute switches, ringer circuits
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested