STMicroelectronics N-Kanal, MOSFET, 34 A 600 V Forbedring, 8 Ben, STO67N60M6
- RS-varenummer:
- 206-8633P
- Producentens varenummer:
- STO67N60M6
- Brand:
- STMicroelectronics
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- RS-varenummer:
- 206-8633P
- Producentens varenummer:
- STO67N60M6
- Brand:
- STMicroelectronics
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | STMicroelectronics | |
| Kanaltype | N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 34 A | |
| Drain source spænding maks. (Vds) | 600 V | |
| Kanalform | Forbedring | |
| Benantal | 8 | |
| Serie | STO67N60M6 | |
| Drain source modstand maks. (Rds) | 54 mΩ | |
| Monteringstype | Overflade | |
| Vælg alle | ||
|---|---|---|
Brand STMicroelectronics | ||
Kanaltype N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 34 A | ||
Drain source spænding maks. (Vds) 600 V | ||
Kanalform Forbedring | ||
Benantal 8 | ||
Serie STO67N60M6 | ||
Drain source modstand maks. (Rds) 54 mΩ | ||
Monteringstype Overflade | ||
The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
High creepage package
Excellent switching performance thanks to the extra driving source pin