STMicroelectronics N-Kanal, MOSFET, 72 A 650 V, 4 Ben, TO-247-4
- RS-varenummer:
- 210-8749P
- Producentens varenummer:
- STW68N65DM6-4AG
- Brand:
- STMicroelectronics
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- RS-varenummer:
- 210-8749P
- Producentens varenummer:
- STW68N65DM6-4AG
- Brand:
- STMicroelectronics
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | STMicroelectronics | |
| Kanaltype | N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 72 A | |
| Drain source spænding maks. (Vds) | 650 V | |
| Benantal | 4 | |
| Emballagetype | TO-247-4 | |
| Drain source modstand maks. (Rds) | 39 mΩ | |
| Monteringstype | Hulmontering | |
| Vælg alle | ||
|---|---|---|
Brand STMicroelectronics | ||
Kanaltype N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 72 A | ||
Drain source spænding maks. (Vds) 650 V | ||
Benantal 4 | ||
Emballagetype TO-247-4 | ||
Drain source modstand maks. (Rds) 39 mΩ | ||
Monteringstype Hulmontering | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
Designed for automotive applications
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
Zener-protected