STMicroelectronics N-Kanal, MOSFET, 2.5 A 90 V, 5 Ben, LBB, RF3L05150CB4
- RS-varenummer:
- 218-4819P
- Producentens varenummer:
- RF3L05150CB4
- Brand:
- STMicroelectronics
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- RS-varenummer:
- 218-4819P
- Producentens varenummer:
- RF3L05150CB4
- Brand:
- STMicroelectronics
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | STMicroelectronics | |
| Kanaltype | N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 2.5 A | |
| Drain source spænding maks. (Vds) | 90 V | |
| Benantal | 5 | |
| Emballagetype | LBB | |
| Serie | RF3L05150CB4 | |
| Drain source modstand maks. (Rds) | 1 Ω | |
| Monteringstype | Overflade | |
| Vælg alle | ||
|---|---|---|
Brand STMicroelectronics | ||
Kanaltype N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 2.5 A | ||
Drain source spænding maks. (Vds) 90 V | ||
Benantal 5 | ||
Emballagetype LBB | ||
Serie RF3L05150CB4 | ||
Drain source modstand maks. (Rds) 1 Ω | ||
Monteringstype Overflade | ||
The STMicroelectronics XXXx Is the state of the ART LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. This product also finds application in 136-174 MHz commercial ground communication and 30-512 MHz Jammer, ground/air communication systems.
Has Integrated ESD Protection
Has High Efficiency and Linear Gain operations
Has European Directive 2002/95/EC Compliance