Infineon 1 N-Kanal Enkelt, MOSFET, 162 A 40 V Forbedring, 3 Ben, I2PAK (TO-262), HEXFET
- RS-varenummer:
- 543-0822P
- Producentens varenummer:
- IRF1404LPBF
- Brand:
- Infineon
Kan ikke leveres i øjeblikket
Vi ved ikke, om dette produkt kommer på lager igen. RS har planer om at tage det ud af sortimentet inden længe.
- RS-varenummer:
- 543-0822P
- Producentens varenummer:
- IRF1404LPBF
- Brand:
- Infineon
Egenskaber
Tekniske referencer
Lovgivning og oprindelsesland
Generel produktinformation
Find lignende produkter ved at vælge én eller flere attributter.
Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | Infineon | |
| Antal elementer per chip | 1 | |
| Kanaltype | N | |
| Transistorkonfiguration | Enkelt | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 162 A | |
| Drain source spænding maks. (Vds) | 40 V | |
| Kanalform | Forbedring | |
| Benantal | 3 | |
| Emballagetype | I2PAK (TO-262) | |
| Serie | HEXFET | |
| Gennemgangsspænding (Vf) | 1.3 V | |
| Højde | 9.65 mm | |
| Længde | 10.67 mm | |
| Drain source modstand maks. (Rds) | 4 mΩ | |
| Portkildespænding maks. | 20 V, -20 V | |
| Driftstemperatur maks. | 175 °C | |
| Effektafsættelse maks. (Pd) | 3.8 W | |
| Min. driftstemperatur | -55 °C | |
| Monteringstype | Hulmontering | |
| Bredde | 4.83 mm | |
| Vælg alle | ||
|---|---|---|
Brand Infineon | ||
Antal elementer per chip 1 | ||
Kanaltype N | ||
Transistorkonfiguration Enkelt | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 162 A | ||
Drain source spænding maks. (Vds) 40 V | ||
Kanalform Forbedring | ||
Benantal 3 | ||
Emballagetype I2PAK (TO-262) | ||
Serie HEXFET | ||
Gennemgangsspænding (Vf) 1.3 V | ||
Højde 9.65 mm | ||
Længde 10.67 mm | ||
Drain source modstand maks. (Rds) 4 mΩ | ||
Portkildespænding maks. 20 V, -20 V | ||
Driftstemperatur maks. 175 °C | ||
Effektafsættelse maks. (Pd) 3.8 W | ||
Min. driftstemperatur -55 °C | ||
Monteringstype Hulmontering | ||
Bredde 4.83 mm | ||
Infineon HEXFET Series MOSFET, 162A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF1404LPBF
This MOSFET provides an efficient solution in various electronic applications, particularly where high performance is essential. Its Advanced processing techniques make it suitable for automation and electronic control systems, contributing to modern power management devices.
Features & Benefits
• Delivers a continuous drain current of 162A for robust performance
• Withstands a maximum drain-source voltage of 40V for safe operation
• Exhibits low on-resistance (RDS(on)) of 4 mΩ, enhancing energy efficiency
• Utilises enhancement mode technology for improved switching performance
• Supports through-hole mounting, facilitating integration into existing designs
Applications
• Used in high current circuits for power regulation
• Suitable for power supply designs in industrial automation
• Applied in electric motor drives and control systems
• Ideal for DC-DC converters in renewable energy systems
What is the maximum power dissipation capability?
It can handle power dissipation up to 3.8W under specific conditions, ensuring optimal performance without overheating during operation.
Is it compatible with surface mount designs?
While primarily in the I2PAK package for through-hole applications, it can be integrated into other industrial designs requiring robust components.
How should it be mounted for optimal performance?
Follow proper through-hole mounting techniques to ensure secure soldering, preventing thermal and mechanical failures during operation.
What are the implications of exceeding the specified limits?
Exceeding the continuous drain current or voltage limits may cause thermal overload or permanent damage to the device, affecting overall system reliability.
Can this component be reused after installation?
Reinstallation is possible if careful removal techniques are employed, though repeated thermal cycling may impact long-term reliability.