STMicroelectronics N-Kanal, SiC-strømmodul, 55 A 1.2 kV Forbedring, 7 Ben, H2PAK-7, SCTH50N120-7
- RS-varenummer:
- 204-3954P
- Producentens varenummer:
- SCTH50N120-7
- Brand:
- STMicroelectronics
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- RS-varenummer:
- 204-3954P
- Producentens varenummer:
- SCTH50N120-7
- Brand:
- STMicroelectronics
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | STMicroelectronics | |
| Kanaltype | N | |
| Produkttype | SiC-strømmodul | |
| Drain-strøm kontinuerlig maks. (Id) | 55 A | |
| Drain source spænding maks. (Vds) | 1.2 kV | |
| Kanalform | Forbedring | |
| Benantal | 7 | |
| Emballagetype | H2PAK-7 | |
| Serie | SCTH50N120-7 | |
| Drain source modstand maks. (Rds) | 0.065 Ω | |
| Monteringstype | Overflade | |
| Vælg alle | ||
|---|---|---|
Brand STMicroelectronics | ||
Kanaltype N | ||
Produkttype SiC-strømmodul | ||
Drain-strøm kontinuerlig maks. (Id) 55 A | ||
Drain source spænding maks. (Vds) 1.2 kV | ||
Kanalform Forbedring | ||
Benantal 7 | ||
Emballagetype H2PAK-7 | ||
Serie SCTH50N120-7 | ||
Drain source modstand maks. (Rds) 0.065 Ω | ||
Monteringstype Overflade | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very tight variation of on-resistance vs.
temperature
Very fast and robust intrinsic body diode
Low capacitance