STMicroelectronics 1, MOSFET, 90 A 1.2 kV, 7 Ben, H2PAK-7, SCTH70N
- RS-varenummer:
- 219-4224P
- Producentens varenummer:
- SCTH70N120G2V-7
- Brand:
- STMicroelectronics
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- RS-varenummer:
- 219-4224P
- Producentens varenummer:
- SCTH70N120G2V-7
- Brand:
- STMicroelectronics
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | STMicroelectronics | |
| Antal elementer per chip | 1 | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 90 A | |
| Drain source spænding maks. (Vds) | 1.2 kV | |
| Benantal | 7 | |
| Emballagetype | H2PAK-7 | |
| Serie | SCTH70N | |
| Drain source modstand maks. (Rds) | 0.21 Ω | |
| Monteringstype | Overflade | |
| Vælg alle | ||
|---|---|---|
Brand STMicroelectronics | ||
Antal elementer per chip 1 | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 90 A | ||
Drain source spænding maks. (Vds) 1.2 kV | ||
Benantal 7 | ||
Emballagetype H2PAK-7 | ||
Serie SCTH70N | ||
Drain source modstand maks. (Rds) 0.21 Ω | ||
Monteringstype Overflade | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances