Infineon N-Kanal, MOSFET-transistor, 101 A 60 V, 8 ben, SuperSO8 5 x 6 BSZ040N06LS5ATMA1

The Infineon OptiMOS™ 5 N-channel power MOSFET has 60 V drain source voltage (VDS) & 101 A drain current (ID). It's logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Optimized for high performance SMPS ,e.g. sync. Anbefalet
100 % avalanche-testet
Fremragende termisk modstand
, 4 (N-kanal)
Kvalificeret i overensstemmelse med JEDEC1) til målanvendelser
Blyfri forgyldning
RoHScompliant
Halogenfri i overensstemmelse med IEC61249-2-21