onsemi 1 N-Kanal Enkelt, MOSFET, 43 A 100 V Forbedring, 3 Ben, JEDEC TO-220AB, QFET
- RS-varenummer:
- 671-5111
- Producentens varenummer:
- FQP44N10
- Brand:
- onsemi
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Vi ved ikke, om dette produkt kommer på lager igen. RS har planer om at tage det ud af sortimentet inden længe.
- RS-varenummer:
- 671-5111
- Producentens varenummer:
- FQP44N10
- Brand:
- onsemi
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Find lignende produkter ved at vælge én eller flere attributter.
Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Antal elementer per chip | 1 | |
| Kanaltype | N | |
| Transistorkonfiguration | Enkelt | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 43 A | |
| Drain source spænding maks. (Vds) | 100 V | |
| Kanalform | Forbedring | |
| Benantal | 3 | |
| Emballagetype | JEDEC TO-220AB | |
| Serie | QFET | |
| Højde | 9.4 mm | |
| Længde | 10.1 mm | |
| Drain source modstand maks. (Rds) | 39 mΩ | |
| Portkildespænding maks. | 25 V, -25 V | |
| Driftstemperatur maks. | 175 °C | |
| Effektafsættelse maks. (Pd) | 146 W | |
| Min. driftstemperatur | -55 °C | |
| Monteringstype | Hulmontering | |
| Bredde | 4.7 mm | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Antal elementer per chip 1 | ||
Kanaltype N | ||
Transistorkonfiguration Enkelt | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 43 A | ||
Drain source spænding maks. (Vds) 100 V | ||
Kanalform Forbedring | ||
Benantal 3 | ||
Emballagetype JEDEC TO-220AB | ||
Serie QFET | ||
Højde 9.4 mm | ||
Længde 10.1 mm | ||
Drain source modstand maks. (Rds) 39 mΩ | ||
Portkildespænding maks. 25 V, -25 V | ||
Driftstemperatur maks. 175 °C | ||
Effektafsættelse maks. (Pd) 146 W | ||
Min. driftstemperatur -55 °C | ||
Monteringstype Hulmontering | ||
Bredde 4.7 mm | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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