CY14V101QS-SF108XI, NVRAM, 1Mbit, Overflademontering, 16 Ben, SOIC
- RS-varenummer:
- 194-9096
- Producentens varenummer:
- CY14V101QS-SF108XI
- Brand:
- Infineon
Der er mulighed for mængderabat
Indhold (1 enhed)*
Kr. 122,66
(ekskl. moms)
Kr. 153,32
(inkl. moms)
Lagerinformation er i øjeblikket ikke tilgængelig - Vend tilbage senere
Enheder | Per stk. |
|---|---|
| 1 - 4 | Kr. 122,66 |
| 5 - 9 | Kr. 119,52 |
| 10 + | Kr. 116,53 |
*Vejledende pris
- RS-varenummer:
- 194-9096
- Producentens varenummer:
- CY14V101QS-SF108XI
- Brand:
- Infineon
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | Infineon | |
| Memory-størrelse | 1Mbit | |
| Organisation | 128 K x 8 bit | |
| Databusbredde | 8bit | |
| Monteringstype | Overflademontering | |
| Kapslingstype | SOIC | |
| Benantal | 16 | |
| Dimensioner | 10.49 x 7.59 x 2.36mm | |
| Længde | 10.49mm | |
| Bredde | 7.59mm | |
| Højde | 2.36mm | |
| Driftsforsyningsspænding maks. | 3,6 V | |
| Driftstemperatur maks. | +85 °C | |
| Driftsforsyningsspænding min. | 2,7 V | |
| Driftstemperatur min. | -40 °C | |
| Antal Bits per ord | 8bit | |
| Antal ord | 128K | |
| Vælg alle | ||
|---|---|---|
Brand Infineon | ||
Memory-størrelse 1Mbit | ||
Organisation 128 K x 8 bit | ||
Databusbredde 8bit | ||
Monteringstype Overflademontering | ||
Kapslingstype SOIC | ||
Benantal 16 | ||
Dimensioner 10.49 x 7.59 x 2.36mm | ||
Længde 10.49mm | ||
Bredde 7.59mm | ||
Højde 2.36mm | ||
Driftsforsyningsspænding maks. 3,6 V | ||
Driftstemperatur maks. +85 °C | ||
Driftsforsyningsspænding min. 2,7 V | ||
Driftstemperatur min. -40 °C | ||
Antal Bits per ord 8bit | ||
Antal ord 128K | ||
- COO (Country of Origin):
- PH
The Cypress CY14V101QS combines a 1-Mbit nvSRAM with a QPI interface. The QPI allows writing and reading the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) through the use of selected opcodes. The memory is organized as 128Kbytes each consisting of SRAM and nonvolatile SONOS Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide highly reliable storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) take place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instructions.
