Diskrete halvledere

BC557BTA, Transistor, PNP -100 mA -45 V 150 MHz, 3 ben, TO-92 Enkelt

onsemi 2.7V Zenerdiode Overflademontering 500 mW, SOD-123

MJ15004G, Transistor, PNP -20 A -140 V 2 MHz, 2 ben, TO-204AA Enkelt

BC847PN-7-F, Dual, Transistor, NPN/PNP 100 mA 45 V 200 MHz, 6 ben, SOT-363 (SC-88) Isoleret

Taiwan Semiconductor Enfaset Brokoblet ensretter, 800mA 800V, 4 ben MBS

HY Electronic Corp Enfaset Brokoblet ensretter, 6A 600V, 4 ben KBU

Nexperia BAV99,215 Dual Diode, Serie, 100V Silicon Junction, 4ns, 215mA, 3-Pin SOT-23 (TO-236AB) 1.25V

HYG15P120A1K1, IGBT-modul, N-Kanal, 20 A 1200 V, 22 ben 3-faset

Diodes Inc 1N4007-T Diode, 1000V Silicon Junction, 1A, 2-Pin DO-41 1V

A2982SLWTR-T, Darlington transistor, NPN + PNP 500 mA 50 V, 20 ben, SOIC W

BC547B, Transistor, NPN 100 mA 45 V 300 MHz, 3 ben, TO-92 Enkelt

Taiwan Semiconductor, TVS-diode, 1500W, Tovejs, 45.4V, 28V, 2 ben, DO-214AB (SMC), SMCJ28CA

Infineon N-Kanal, MOSFET, 137 A. 100 V, 3 ben, TO-220 IPP045N10N3GXKSA1

DiodesZetex Enfaset Brokoblet ensretter, 1.5A 1000V, 4 ben DF-S

Infineon N-Kanal, MOSFET, 100 A 60 V, PG-TO263-3 IPB026N06NATMA1

Vishay VX60M153PW-M3/P Ensretter & Schottky-diode, 2 x fælles katodepar, 150V Schottky barriere, 60A TO-247AD 3L

BPW34S, PIN diode

MMBT3904,215, Transistor, NPN 200 mA 40 V, 3 ben, SOT-23 (TO-236AB) Enkelt

Taiwan Semi 6A80G Diode, 800V Silicon Junction, 6A, 2-Pin R 6 950mV

Infineon N-Kanal, MOSFET, 380 A 40 V, 7 ben, D2PAK-7, HEXFET IRLS3034TRL7PP