onsemi N-Kanal, MOSFET, 43.5 A 300 V Forbedring, 3 Ben, TO-3PN, QFET
- RS-varenummer:
- 145-4398
- Producentens varenummer:
- FQA44N30
- Brand:
- onsemi
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Vi ved ikke, om dette produkt kommer på lager igen. RS har planer om at tage det ud af sortimentet inden længe.
- RS-varenummer:
- 145-4398
- Producentens varenummer:
- FQA44N30
- Brand:
- onsemi
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Produkttype | MOSFET | |
| Kanaltype | N | |
| Drain-strøm kontinuerlig maks. Id | 43.5A | |
| Drain source spænding maks. Vds | 300V | |
| Serie | QFET | |
| Emballagetype | TO-3PN | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Drain source modstand maks. Rds | 69mΩ | |
| Kanalform | Forbedring | |
| Gate-ladning ved Qg Vgs typisk | 12nC | |
| Effektafsættelse maks. Pd | 310W | |
| Gennemgangsspænding Vf | 1.5V | |
| Portkildespænding maks. | -30V, +30V | |
| Min. driftstemperatur | -55°C | |
| Driftstemperatur maks. | 150°C | |
| Længde | 15.8mm | |
| Bredde | 5mm | |
| Standarder/godkendelser | No | |
| Højde | 20.1mm | |
| Bilindustristandarder | Nej | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Produkttype MOSFET | ||
Kanaltype N | ||
Drain-strøm kontinuerlig maks. Id 43.5A | ||
Drain source spænding maks. Vds 300V | ||
Serie QFET | ||
Emballagetype TO-3PN | ||
Monteringstype Hulmontering | ||
Benantal 3 | ||
Drain source modstand maks. Rds 69mΩ | ||
Kanalform Forbedring | ||
Gate-ladning ved Qg Vgs typisk 12nC | ||
Effektafsættelse maks. Pd 310W | ||
Gennemgangsspænding Vf 1.5V | ||
Portkildespænding maks. -30V, +30V | ||
Min. driftstemperatur -55°C | ||
Driftstemperatur maks. 150°C | ||
Længde 15.8mm | ||
Bredde 5mm | ||
Standarder/godkendelser No | ||
Højde 20.1mm | ||
Bilindustristandarder Nej | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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