onsemi N-Kanal, MOSFET, 65 A 650 V Forbedring, 3 Ben, TO-247, NTHL
- RS-varenummer:
- 178-4253
- Producentens varenummer:
- NTHL040N65S3F
- Brand:
- onsemi
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- RS-varenummer:
- 178-4253
- Producentens varenummer:
- NTHL040N65S3F
- Brand:
- onsemi
Egenskaber
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Generel produktinformation
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Kanaltype | N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. Id | 65A | |
| Drain source spænding maks. Vds | 650V | |
| Serie | NTHL | |
| Emballagetype | TO-247 | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Drain source modstand maks. Rds | 40mΩ | |
| Kanalform | Forbedring | |
| Portkildespænding maks. | 30V | |
| Gennemgangsspænding Vf | 1.3V | |
| Min. driftstemperatur | -55°C | |
| Gate-ladning ved Qg Vgs typisk | 158nC | |
| Effektafsættelse maks. Pd | 446W | |
| Driftstemperatur maks. | 150°C | |
| Standarder/godkendelser | No | |
| Bredde | 4.82mm | |
| Længde | 15.87mm | |
| Højde | 20.82mm | |
| Bilindustristandarder | Nej | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Kanaltype N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. Id 65A | ||
Drain source spænding maks. Vds 650V | ||
Serie NTHL | ||
Emballagetype TO-247 | ||
Monteringstype Hulmontering | ||
Benantal 3 | ||
Drain source modstand maks. Rds 40mΩ | ||
Kanalform Forbedring | ||
Portkildespænding maks. 30V | ||
Gennemgangsspænding Vf 1.3V | ||
Min. driftstemperatur -55°C | ||
Gate-ladning ved Qg Vgs typisk 158nC | ||
Effektafsættelse maks. Pd 446W | ||
Driftstemperatur maks. 150°C | ||
Standarder/godkendelser No | ||
Bredde 4.82mm | ||
Længde 15.87mm | ||
Højde 20.82mm | ||
Bilindustristandarder Nej | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150
Ultra Low Gate Charge (Typ. Qg = 158 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1366pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 32 mΩ
Applications
Telecommunication
Cloud system
Industrial
Benefits
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
End Products
Telecom power
Server power
EV charger
Solar / UPS