onsemi Type N-Kanal, MOSFET, 40 A 650 V Forbedring, 3 Ben, TO-220 Nej
- RS-varenummer:
- 178-4258
- Producentens varenummer:
- NTPF082N65S3F
- Brand:
- onsemi
Indhold (1 rør af 50 enheder)*
Kr. 1.066,45
(ekskl. moms)
Kr. 1.333,05
(inkl. moms)
GRATIS levering for online ordrer over 500,00 kr.
Restlager hos RS
- Sidste 250 enhed(er), klar til afsendelse fra et alternativt lager
Enheder | Per stk. | Pr rør* |
|---|---|---|
| 50 + | Kr. 21,329 | Kr. 1.066,45 |
*Vejledende pris
- RS-varenummer:
- 178-4258
- Producentens varenummer:
- NTPF082N65S3F
- Brand:
- onsemi
Egenskaber
Tekniske referencer
Lovgivning og oprindelsesland
Generel produktinformation
Find lignende produkter ved at vælge én eller flere attributter.
Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Kanaltype | Type N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. Id | 40A | |
| Drain source spænding maks. Vds | 650V | |
| Emballagetype | TO-220 | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Drain source modstand maks. Rds | 82mΩ | |
| Kanalform | Forbedring | |
| Min. driftstemperatur | -55°C | |
| Portkildespænding maks. | 30 V | |
| Gate-ladning ved Qg Vgs typisk | 70nC | |
| Effektafsættelse maks. Pd | 48W | |
| Gennemgangsspænding Vf | 1.3V | |
| Driftstemperatur maks. | 150°C | |
| Standarder/godkendelser | No | |
| Bredde | 4.9 mm | |
| Længde | 10.63mm | |
| Højde | 16.12mm | |
| Bilindustristandarder | Nej | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Kanaltype Type N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. Id 40A | ||
Drain source spænding maks. Vds 650V | ||
Emballagetype TO-220 | ||
Monteringstype Hulmontering | ||
Benantal 3 | ||
Drain source modstand maks. Rds 82mΩ | ||
Kanalform Forbedring | ||
Min. driftstemperatur -55°C | ||
Portkildespænding maks. 30 V | ||
Gate-ladning ved Qg Vgs typisk 70nC | ||
Effektafsættelse maks. Pd 48W | ||
Gennemgangsspænding Vf 1.3V | ||
Driftstemperatur maks. 150°C | ||
Standarder/godkendelser No | ||
Bredde 4.9 mm | ||
Længde 10.63mm | ||
Højde 16.12mm | ||
Bilindustristandarder Nej | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150 oC
Ultra Low Gate Charge (Typ. Qg = 70 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge Circuit
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
Solar / UPS
EV charger
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