onsemi 2 Type N, Type P-Kanal Fælles skærm, MOSFET, 9 A 40 V Forbedring, 5 Ben, TO-252, PowerTrench
- RS-varenummer:
- 671-0356
- Producentens varenummer:
- FDD8424H
- Brand:
- onsemi
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- RS-varenummer:
- 671-0356
- Producentens varenummer:
- FDD8424H
- Brand:
- onsemi
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Antal elementer per chip | 2 | |
| Kanaltype | Type N, Type P | |
| Transistorkonfiguration | Fælles skærm | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 9 A | |
| Drain source spænding maks. (Vds) | 40 V | |
| Kanalform | Forbedring | |
| Benantal | 5 | |
| Emballagetype | TO-252 | |
| Serie | PowerTrench | |
| Højde | 2.39 mm | |
| Længde | 6.73 mm | |
| Drain source modstand maks. (Rds) | 54 mΩ | |
| Portkildespænding maks. | 20 V, -20 V | |
| Driftstemperatur maks. | 150 °C | |
| Effektafsættelse maks. (Pd) | 3.1 W | |
| Min. driftstemperatur | -55 °C | |
| Monteringstype | Overflade | |
| Bredde | 6.22 mm | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Antal elementer per chip 2 | ||
Kanaltype Type N, Type P | ||
Transistorkonfiguration Fælles skærm | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 9 A | ||
Drain source spænding maks. (Vds) 40 V | ||
Kanalform Forbedring | ||
Benantal 5 | ||
Emballagetype TO-252 | ||
Serie PowerTrench | ||
Højde 2.39 mm | ||
Længde 6.73 mm | ||
Drain source modstand maks. (Rds) 54 mΩ | ||
Portkildespænding maks. 20 V, -20 V | ||
Driftstemperatur maks. 150 °C | ||
Effektafsættelse maks. (Pd) 3.1 W | ||
Min. driftstemperatur -55 °C | ||
Monteringstype Overflade | ||
Bredde 6.22 mm | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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