onsemi 2 Type N, Type P-Kanal Isoleret, MOSFET, 6.2 A 40 V Forbedring, 8 Ben, SOIC, PowerTrench
- RS-varenummer:
- 671-0539
- Producentens varenummer:
- FDS4897C
- Brand:
- onsemi
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- RS-varenummer:
- 671-0539
- Producentens varenummer:
- FDS4897C
- Brand:
- onsemi
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Find lignende produkter ved at vælge én eller flere attributter.
Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Kanaltype | Type N, Type P | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. Id | 6.2A | |
| Drain source spænding maks. Vds | 40V | |
| Serie | PowerTrench | |
| Emballagetype | SOIC | |
| Monteringstype | Overflade | |
| Benantal | 8 | |
| Drain source modstand maks. Rds | 63mΩ | |
| Kanalform | Forbedring | |
| Gennemgangsspænding Vf | 700mV | |
| Min. driftstemperatur | -55°C | |
| Portkildespænding maks. | -20V, +20V | |
| Gate-ladning ved Qg Vgs typisk | 20nC | |
| Effektafsættelse maks. Pd | 2W | |
| Driftstemperatur maks. | 150°C | |
| Transistorkonfiguration | Isoleret | |
| Standarder/godkendelser | RoHS Compliant | |
| Bredde | 4mm | |
| Højde | 1.5mm | |
| Længde | 5mm | |
| Antal elementer per chip | 2 | |
| Bilindustristandarder | Nej | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Kanaltype Type N, Type P | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. Id 6.2A | ||
Drain source spænding maks. Vds 40V | ||
Serie PowerTrench | ||
Emballagetype SOIC | ||
Monteringstype Overflade | ||
Benantal 8 | ||
Drain source modstand maks. Rds 63mΩ | ||
Kanalform Forbedring | ||
Gennemgangsspænding Vf 700mV | ||
Min. driftstemperatur -55°C | ||
Portkildespænding maks. -20V, +20V | ||
Gate-ladning ved Qg Vgs typisk 20nC | ||
Effektafsættelse maks. Pd 2W | ||
Driftstemperatur maks. 150°C | ||
Transistorkonfiguration Isoleret | ||
Standarder/godkendelser RoHS Compliant | ||
Bredde 4mm | ||
Højde 1.5mm | ||
Længde 5mm | ||
Antal elementer per chip 2 | ||
Bilindustristandarder Nej | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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