onsemi N-Kanal, MOSFET, 18 A 200 V Forbedring, 3 Ben, TO-220, IRL
- RS-varenummer:
- 807-8711
- Producentens varenummer:
- IRL640A
- Brand:
- onsemi
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- RS-varenummer:
- 807-8711
- Producentens varenummer:
- IRL640A
- Brand:
- onsemi
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Kanaltype | N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. Id | 18A | |
| Drain source spænding maks. Vds | 200V | |
| Emballagetype | TO-220 | |
| Serie | IRL | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Drain source modstand maks. Rds | 180mΩ | |
| Kanalform | Forbedring | |
| Gate-ladning ved Qg Vgs typisk | 40nC | |
| Effektafsættelse maks. Pd | 110W | |
| Portkildespænding maks. | -20V, +20V | |
| Min. driftstemperatur | -55°C | |
| Gennemgangsspænding Vf | 1.5V | |
| Driftstemperatur maks. | 150°C | |
| Længde | 10.67mm | |
| Højde | 16.3mm | |
| Standarder/godkendelser | No | |
| Bredde | 4.7mm | |
| Bilindustristandarder | Nej | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Kanaltype N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. Id 18A | ||
Drain source spænding maks. Vds 200V | ||
Emballagetype TO-220 | ||
Serie IRL | ||
Monteringstype Hulmontering | ||
Benantal 3 | ||
Drain source modstand maks. Rds 180mΩ | ||
Kanalform Forbedring | ||
Gate-ladning ved Qg Vgs typisk 40nC | ||
Effektafsættelse maks. Pd 110W | ||
Portkildespænding maks. -20V, +20V | ||
Min. driftstemperatur -55°C | ||
Gennemgangsspænding Vf 1.5V | ||
Driftstemperatur maks. 150°C | ||
Længde 10.67mm | ||
Højde 16.3mm | ||
Standarder/godkendelser No | ||
Bredde 4.7mm | ||
Bilindustristandarder Nej | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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