onsemi Enkelt N-Kanal, MOSFET, 18 A 200 V Forbedring, 3 Ben, TO-220
- RS-varenummer:
- 145-5670
- Producentens varenummer:
- IRL640A
- Brand:
- onsemi
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- RS-varenummer:
- 145-5670
- Producentens varenummer:
- IRL640A
- Brand:
- onsemi
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Find lignende produkter ved at vælge én eller flere attributter.
Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Transistorkonfiguration | Enkelt | |
| Kanaltype | N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. (Id) | 18 A | |
| Drain source spænding maks. (Vds) | 200 V | |
| Kanalform | Forbedring | |
| Benantal | 3 | |
| Emballagetype | TO-220 | |
| Højde | 16.3 mm | |
| Længde | 10.67 mm | |
| Drain source modstand maks. (Rds) | 180 mΩ | |
| Portkildespænding maks. | 20 V, -20 V | |
| Driftstemperatur maks. | 150 °C | |
| Effektafsættelse maks. (Pd) | 110 W | |
| Min. driftstemperatur | -55 °C | |
| Monteringstype | Hulmontering | |
| Bredde | 4.7 mm | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Transistorkonfiguration Enkelt | ||
Kanaltype N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. (Id) 18 A | ||
Drain source spænding maks. (Vds) 200 V | ||
Kanalform Forbedring | ||
Benantal 3 | ||
Emballagetype TO-220 | ||
Højde 16.3 mm | ||
Længde 10.67 mm | ||
Drain source modstand maks. (Rds) 180 mΩ | ||
Portkildespænding maks. 20 V, -20 V | ||
Driftstemperatur maks. 150 °C | ||
Effektafsættelse maks. (Pd) 110 W | ||
Min. driftstemperatur -55 °C | ||
Monteringstype Hulmontering | ||
Bredde 4.7 mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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