CY14B104NA-ZS45XI, NVRAM, 4Mbit, Overflademontering, 44 Ben, TSOP

Indhold (1 bakke af 135 enheder)*

Kr. 22.510,71

(ekskl. moms)

Kr. 28.138,32

(inkl. moms)

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Enheder
Per stk.
Pr bakke*
135 +Kr. 166,746Kr. 22.510,71

*Vejledende pris

RS-varenummer:
194-9079
Producentens varenummer:
CY14B104NA-ZS45XI
Brand:
Infineon
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Brand

Infineon

Memory-størrelse

4Mbit

Organisation

256 K x 16 bit

Interface-type

Parallel

Databusbredde

16bit

Random access-tid maks.

45ns

Monteringstype

Overflademontering

Kapslingstype

TSOP

Benantal

44

Dimensioner

18.51 x 10.26 x 1.04mm

Længde

18.51mm

Bredde

10.26mm

Højde

1.04mm

Driftsforsyningsspænding maks.

3,6 V

Driftstemperatur maks.

+85 °C

Driftstemperatur min.

-40 °C

Antal ord

256K

Antal Bits per ord

16bit

Driftsforsyningsspænding min.

2,7 V

The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

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