CY14B104NA-ZS45XI, NVRAM, 4Mbit, Overflademontering, 44 Ben, TSOP
- RS-varenummer:
- 194-9079
- Producentens varenummer:
- CY14B104NA-ZS45XI
- Brand:
- Infineon
Indhold (1 bakke af 135 enheder)*
Kr. 22.510,71
(ekskl. moms)
Kr. 28.138,32
(inkl. moms)
Lagerinformation er i øjeblikket ikke tilgængelig - Vend tilbage senere
Enheder | Per stk. | Pr bakke* |
|---|---|---|
| 135 + | Kr. 166,746 | Kr. 22.510,71 |
*Vejledende pris
- RS-varenummer:
- 194-9079
- Producentens varenummer:
- CY14B104NA-ZS45XI
- Brand:
- Infineon
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Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | Infineon | |
| Memory-størrelse | 4Mbit | |
| Organisation | 256 K x 16 bit | |
| Interface-type | Parallel | |
| Databusbredde | 16bit | |
| Random access-tid maks. | 45ns | |
| Monteringstype | Overflademontering | |
| Kapslingstype | TSOP | |
| Benantal | 44 | |
| Dimensioner | 18.51 x 10.26 x 1.04mm | |
| Længde | 18.51mm | |
| Bredde | 10.26mm | |
| Højde | 1.04mm | |
| Driftsforsyningsspænding maks. | 3,6 V | |
| Driftstemperatur maks. | +85 °C | |
| Driftstemperatur min. | -40 °C | |
| Antal ord | 256K | |
| Antal Bits per ord | 16bit | |
| Driftsforsyningsspænding min. | 2,7 V | |
| Vælg alle | ||
|---|---|---|
Brand Infineon | ||
Memory-størrelse 4Mbit | ||
Organisation 256 K x 16 bit | ||
Interface-type Parallel | ||
Databusbredde 16bit | ||
Random access-tid maks. 45ns | ||
Monteringstype Overflademontering | ||
Kapslingstype TSOP | ||
Benantal 44 | ||
Dimensioner 18.51 x 10.26 x 1.04mm | ||
Længde 18.51mm | ||
Bredde 10.26mm | ||
Højde 1.04mm | ||
Driftsforsyningsspænding maks. 3,6 V | ||
Driftstemperatur maks. +85 °C | ||
Driftstemperatur min. -40 °C | ||
Antal ord 256K | ||
Antal Bits per ord 16bit | ||
Driftsforsyningsspænding min. 2,7 V | ||
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
