onsemi Type N-Kanal, Effekt MOSFET, 19 A 650 V Forbedring, 3 Ben, TO-220, SUPERFET III Nej

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Indhold (1 rør af 50 enheder)*

Kr. 790,50

(ekskl. moms)

Kr. 988,00

(inkl. moms)

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Pr rør*
50 +Kr. 15,81Kr. 790,50

*Vejledende pris

RS-varenummer:
178-4243
Producentens varenummer:
FCP165N65S3
Brand:
onsemi
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Brand

onsemi

Produkttype

Effekt MOSFET

Kanaltype

Type N

Drain-strøm kontinuerlig maks. Id

19A

Drain source spænding maks. Vds

650V

Serie

SUPERFET III

Emballagetype

TO-220

Monteringstype

Hulmontering

Benantal

3

Drain source modstand maks. Rds

165mΩ

Kanalform

Forbedring

Min. driftstemperatur

-55°C

Gate-ladning ved Qg Vgs typisk

39nC

Portkildespænding maks.

30 V

Gennemgangsspænding Vf

1.2V

Effektafsættelse maks. Pd

154W

Driftstemperatur maks.

150°C

Standarder/godkendelser

RoHS, Pb-Free, Halide Free

Længde

10.67mm

Bredde

4.7 mm

Højde

16.3mm

Bilindustristandarder

Nej

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 39 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)

Internal Gate Resistance: 4.6 Ω

Optimized Capacitance

Typ. RDS(on) = 140 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consumer

Industrial

End Products:

Notebook / Desktop computer

Game Console

Telecom / Server

LCD / LED TV

LED Lighting / Ballast

Adapter

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