onsemi Type N-Kanal, MOSFET, 46 A 650 V Forbedring, 3 Ben, TO-247, NTHL Nej
- RS-varenummer:
- 178-4255
- Producentens varenummer:
- NTHL065N65S3F
- Brand:
- onsemi
Indhold (1 rør af 30 enheder)*
Kr. 1.110,66
(ekskl. moms)
Kr. 1.388,34
(inkl. moms)
GRATIS levering for online ordrer over 500,00 kr.
Restlager hos RS
- Sidste 1.770 enhed(er), klar til afsendelse fra et alternativt lager
Enheder | Per stk. | Pr rør* |
|---|---|---|
| 30 + | Kr. 37,022 | Kr. 1.110,66 |
*Vejledende pris
- RS-varenummer:
- 178-4255
- Producentens varenummer:
- NTHL065N65S3F
- Brand:
- onsemi
Egenskaber
Tekniske referencer
Lovgivning og oprindelsesland
Generel produktinformation
Find lignende produkter ved at vælge én eller flere attributter.
Vælg alle | Attribut | Værdi |
|---|---|---|
| Brand | onsemi | |
| Kanaltype | Type N | |
| Produkttype | MOSFET | |
| Drain-strøm kontinuerlig maks. Id | 46A | |
| Drain source spænding maks. Vds | 650V | |
| Emballagetype | TO-247 | |
| Serie | NTHL | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Drain source modstand maks. Rds | 65mΩ | |
| Kanalform | Forbedring | |
| Min. driftstemperatur | -55°C | |
| Gate-ladning ved Qg Vgs typisk | 98nC | |
| Portkildespænding maks. | 30 V | |
| Gennemgangsspænding Vf | 1.3V | |
| Effektafsættelse maks. Pd | 337W | |
| Driftstemperatur maks. | 150°C | |
| Bredde | 4.82 mm | |
| Længde | 15.87mm | |
| Højde | 20.82mm | |
| Standarder/godkendelser | No | |
| Bilindustristandarder | Nej | |
| Vælg alle | ||
|---|---|---|
Brand onsemi | ||
Kanaltype Type N | ||
Produkttype MOSFET | ||
Drain-strøm kontinuerlig maks. Id 46A | ||
Drain source spænding maks. Vds 650V | ||
Emballagetype TO-247 | ||
Serie NTHL | ||
Monteringstype Hulmontering | ||
Benantal 3 | ||
Drain source modstand maks. Rds 65mΩ | ||
Kanalform Forbedring | ||
Min. driftstemperatur -55°C | ||
Gate-ladning ved Qg Vgs typisk 98nC | ||
Portkildespænding maks. 30 V | ||
Gennemgangsspænding Vf 1.3V | ||
Effektafsættelse maks. Pd 337W | ||
Driftstemperatur maks. 150°C | ||
Bredde 4.82 mm | ||
Længde 15.87mm | ||
Højde 20.82mm | ||
Standarder/godkendelser No | ||
Bilindustristandarder Nej | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features:
700V@TJ=150
Ultra Low Gate Charge (Typ.Qg=98nC)
Low Effective Output Capacitance (Typ.Coss (eff.)=876pF)
Excellent body diode performance (lowQrr,robust body diode)
Optimized Capacitance
Typ. RDS(on)=54mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift fullbridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar/UPS
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