Diskrete halvledere

Infineon P-Kanal, MOSFET, 74 A 55 V, 3 ben, TO-220AB, HEXFET IRF4905PBF

onsemi N-Kanal, MOSFET, 94 A 30 V, 3 ben, DPAK (TO-252), PowerTrench FDD8896

onsemi N-Kanal, MOSFET, 115 mA 60 V, 3 ben, SOT-23 2N7002

Vishay, ESD beskyttelsesdiode, 150W, Tovejs, 56V, 3 ben, SOT-23, VCAN33A2-03SHE3-08

onsemi N-Kanal, MOSFET, 500 mA 60 V, 3 ben, TO-92 BS170

ZXTC2045E6TA, Dual, Transistor, NPN/PNP 1.5 A 30 V, 6 ben, SOT-23 Isoleret

Vishay N-Kanal, MOSFET, 20 A 500 V, 3 ben, TO-247AC, D Series IRFP460BPBF

Vishay VS-T20HF220 Diode, 2200V Silicon Junction, 20A, 2-Pin D-55 1.5V

Infineon N-Kanal, MOSFET, 49 A 55 V, 3 ben, TO-220AB, HEXFET IRFZ44NPBF

TIP142T, Darlington transistor, NPN 10 A 100 V HFE:500, 3 ben, TO-220 Enkelt

STMicroelectronics, TVS-diode, 1500W, Envejs, 121V, 58V, 2 ben, DO-201, 1.5KE68A

STMicroelectronics N-Kanal, MOSFET, 7 A 600 V, 3 ben, TO-220FP, MDmesh, SuperMESH STP9NK60ZFP

HY Electronic Corp Enfaset Brokoblet ensretter, 10A 1000V, 4 ben GBU

Semikron SKKD 101/16 Dual Diode, Serie, 1600V Silicon Junction, 101A, 3-Pin SEMIPACK1 1.6V

Taiwan Semiconductor Enfaset Brokoblet ensretter, 15A 50V, 4 ben GBPC

Infineon N-Kanal, MOSFET, 343 A 40 V, 3 ben, TO-220AB, HEXFET IRLB3034PBF

Vishay VS-150U120D Diode, Gevindtapkatode, 1200V Silicon Junction, 150A, 2-Pin DO-205AA 1.47V

MJE15032G, Transistor, NPN 8 A 250 V 30 MHz, 3 ben, TO-220AB Enkelt

MJE15033G, Transistor, PNP -8 A -250 V 30 MHz, 3 ben, TO-220AB Enkelt

1N4148W-7-F, Omskifterdiode 100V Silicon Junction, 2 ben, SOD-123 1.25V