Infineon N-Kanal, Effekt MOSFET, 48 A 60 V Forbedring, 3 Ben, JEDEC TO-220AB, HEXFET

RS-varenummer:: 919-4937
Producentens varenummer:: IRFZ44EPBF
Brand:: Infineon

Infineon N-Kanal, Effekt MOSFET, 48 A 60 V Forbedring, 3 Ben, JEDEC TO-220AB, HEXFET

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RS-varenummer:: 919-4937
Producentens varenummer:: IRFZ44EPBF
Brand:: Infineon

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Vælg alle	Attribut	Værdi
	Brand	Infineon
	Kanaltype	N
	Produkttype	Effekt MOSFET
	Drain-strøm kontinuerlig maks. (Id)	48 A
	Drain source spænding maks. (Vds)	60 V
	Kanalform	Forbedring
	Benantal	3
	Emballagetype	JEDEC TO-220AB
	Serie	HEXFET
	Bilindustristandarder	Nej
	Gennemgangsspænding (Vf)	1.3 V
	Højde	8.77 mm
	Længde	10.54 mm
	Drain source modstand maks. (Rds)	0.023 Ω
	Portkildespænding maks.	-20 V, +20 V
	Driftstemperatur maks.	175 °C
	Effektafsættelse maks. (Pd)	110 W
	Min. driftstemperatur	-55 °C
	Monteringstype	Hulmontering
	Standarder/godkendelser	ANSI Y14.5M, JEDEC TO-220AB
	Gate-ladning ved (Qg) Vgs typisk	60 nC
	Bredde	4.69 mm

	Vælg alle
	Brand Infineon
	Kanaltype N
	Produkttype Effekt MOSFET
	Drain-strøm kontinuerlig maks. (Id) 48 A
	Drain source spænding maks. (Vds) 60 V
	Kanalform Forbedring
	Benantal 3
	Emballagetype JEDEC TO-220AB
	Serie HEXFET
	Bilindustristandarder Nej
	Gennemgangsspænding (Vf) 1.3 V
	Højde 8.77 mm
	Længde 10.54 mm
	Drain source modstand maks. (Rds) 0.023 Ω
	Portkildespænding maks. -20 V, +20 V
	Driftstemperatur maks. 175 °C
	Effektafsættelse maks. (Pd) 110 W
	Min. driftstemperatur -55 °C
	Monteringstype Hulmontering
	Standarder/godkendelser ANSI Y14.5M, JEDEC TO-220AB
	Gate-ladning ved (Qg) Vgs typisk 60 nC
	Bredde 4.69 mm

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF

This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is Ideal for electric and electronic systems where quick switching and durability are necessary.

Features & Benefits

• Continuous drain current capability up to 48A for effective operation

• Operates at a drain-source voltage of 60V for power management

• Low Rds(on) improves efficiency and reduces power loss

• Packaged in TO-220AB for straightforward installation and heat dissipation

• Fully avalanche rated, ensuring reliability under stress conditions

Applications

• Power supply circuits for increased efficiency

• Motor control in automation tasks

• DC-DC converters for voltage regulation

• High-performance battery management systems

• Electronic switching devices for enhanced control

What is the maximum gate-to-source voltage for safe operation?

The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.

How can this component be effectively mounted?

It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.

What happens if the device exceeds its maximum junction temperature?

Exceeding the maximum junction temperature of 175°C can result in thermal damage; therefore, proper cooling management is essential.

Can this be used in high-speed switching applications?

Yes, it supports fast switching capabilities, making it suitable for applications requiring Rapid signal processing.

What is the typical power dissipation capability at room temperature?

At 25°C, it can dissipate up to 110W, allowing it to handle substantial power flow without overheating.