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Vishay VS-400UR160D Diode, Gevindtapanode, 1600V Silicon Junction, 400A, 2-Pin DO-9 1.62V

Bourns Enfaset Brokoblet ensretter, 2A 600V, 4 ben SMT

STMicroelectronics N-Kanal, MOSFET, 10 A 480 V Depletion, 3 ben, DPAK (TO-252), STD STD13N60M6

MMBT2222A,215, Transistor, NPN 600 mA 40 V, 3 ben, SOT-23 (TO-236AB) Enkelt

RFN10BGE6STL, Diode, 1A 600V Silicon Junction, 3 ben, TO-252GE

Vishay N-Kanal, MOSFET, 20 A 800 V, 3 ben, TO-220AB SIHP24N80AEF-GE3

BC857BE6327HTSA1, Transistor, PNP -100 mA -45 V 250 MHz, 3 ben, SOT-23 Enkelt

DiodesZetex N-Kanal, MOSFET, 10 A 60 V, 3 ben, SOT-223 AEC-Q101 DMN6069SE-13

Vishay V10PM6-M3/H Ensretter & Schottky-diode, 60V Schottky barriere, 10A, 3-Pin TO-277A

BC847CW,115, Transistor, PNP -100 mA -45 V, 3 ben, SOT-323 (SC-70)

BC338-40 A1, Transistor, NPN 800 mA 25 V, 3 ben, TO-92 Enkelt

Semikron Dobbelt tyristormodul SCR, 55A 1600V 100mA, 1.75V, 7 ben, SEMIPACK1

ISL9V3040D3ST, IGBT, N-Kanal, 21 A 300 V 1MHz, 3 ben, DPAK (TO-252) Enkelt

DiodesZetex Brokoblet ensretter 800V KBJ

onsemi 16V Zenerdiode Overflademontering 225 mW, SOT-23

FDA59N30, Digital transistor, , 3 ben, TIL-3P

Bourns, TVS-diode, Tovejs, 53.3V, DO-214AA (SMB), SMBJ33CA

Toshiba N-Kanal, MOSFET, 60 A 120 V, 3 ben, TO-220SIS, TK TK32A12N1,S4X(S

Nexperia, ESD beskyttelsesdiode, 330W, Envejs, 20V, 3.3V, 2 ben, SOD-523, PESD3V3S1UB,115

United Automation Ac-fasevinkelregulator