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Taiwan Semiconductor, TVS-diode, Envejs, 21.5V, 13V, 2 ben, DO-214AC (SMA), SMAJ13A R3

Vishay N/P-Kanal-Kanal, MOSFET, 3,9 A, 2,1 A 20 V, 6 ben, TSOP-6, TrenchFET SI3585CDV-T1-GE3

IKW40N120H3FKSA1, IGBT, N-Kanal, 80 A 1200 V, 3 ben, TO-247 Enkelt

Vishay, TVS-diode, 5200W, Tovejs, 77.4V, 2 ben, DO-218AB, SM8S48CAHM3/I

Vishay P-Kanal, MOSFET, 150 A 80 V, 3 ben, TO-220AB, TrenchFET SUP60061EL-GE3

onsemi ES1D Diode, 200V Silicon Junction, 15ns, 1A, 2-Pin DO-214AC (SMA) 920mV

Taiwan Semi MUR420 Diode, 200V Silicon Junction, 25ns, 4A, 2-Pin DO-201AD 890mV

STMicroelectronics Tyristor SCR, 0.5A 400V 0.2mA, 1.95V, 3 ben, TO-92

onsemi 27V Zenerdiode Overflademontering 500 mW, SOD-123

Vishay 6.8V Zenerdiode Overflademontering 500 mW, MiniMELF

Infineon N-Kanal, MOSFET, 353 A 24 V, 3 ben, TO-220AB, HEXFET IRF1324PBF

Littelfuse, TVS-diode, 600W, Envejs, 9.2V, 5V, 2 ben, DO-214AA (SMB), SMBJ5.0A

HY Electronic Corp Enfaset Brokoblet ensretter, 3A 1000V, 4 ben KBP

BC856B,215, Transistor, PNP -100 mA -65 V 100 MHz, 3 ben, SOT-23 (TO-236AB) Enkelt

BCP56-10,115, Transistor, NPN 1 A 80 V 180 MHz, 4 ben, SOT-223 (SC-73) Enkelt

STMicroelectronics Tyristor SCR, 16A 1200V 40mA, 1.6V, 3 ben, TO-220AB

Infineon N-Kanal, MOSFET, 16 A 650 V, 3 ben, TO-220 FP, CoolMOS™ P7 IPA60R600P7XKSA1

VS-GT150TS065S, IGBT, N-Kanal, 372 A 650 V, 7 ben, INT-A-PAK 2

MJ15022G, Transistor, NPN 16 A 200 V 4 MHz, 3 ben, TO-204 Enkelt

TSA1036CX RFG, Transistor, PNP 600 mA 60 V 100 MHz, 3 ben, SOT-23 Enkelt