Diskrete halvledere
Kategorier
Pris (Viste pris er ekskl. moms) | Beskrivelse | Produktdata |
IXYH50N120C3D1, IGBT, N-Kanal, 90 A 1200 V 50kHz, 3 ben, TO-247 Enkelt
|
||
IXYS N-Kanal, MOSFET, 94 A 300 V, 3 ben, TO-3PN, HiperFET, Polar3 IXFQ94N30P3
|
||
IXYS Trefaset Brokoblet ensrettermodul, 175A 1600V, 5 ben NF E 1
|
||
|
IXA37IF1200HJ, IGBT, N-Kanal, 58 A 1200 V, 3 ben, ISOPLUS247 Enkelt
|
|
IXYS Trefaset Brokoblet ensrettermodul, 175A 1600V, 5 ben NF E 1
|
||
IXA37IF1200HJ, IGBT, N-Kanal, 58 A 1200 V, 3 ben, ISOPLUS247 Enkelt
|
||
IXYS Tyristor SCR, 48A 1600V 100mA, 1.64V, 3 ben, TO-247AD
|
||
IXYS Enfaset Brokoblet ensrettermodul, 72A 1600V, 4 ben PWS D
|
||
IXYS Enfaset Brokoblet ensrettermodul, 72A 1600V, 4 ben PWS D
|
||
|
IXYS Tyristor SCR, 48A 1600V 100mA, 1.64V, 3 ben, TO-247AD
|
|
IXYS DSA2-16A Diode, 1600V Silicon Junction, 7A, 2-Pin 1.25V
|
||
|
IXYS N-Kanal, MOSFET, 94 A 300 V, 3 ben, TO-247, HiperFET, Polar3 IXFH94N30P3
|
|
IXYS N-Kanal, MOSFET, 36 A 300 V, 3 ben, TO-220, HiperFET, Polar IXTP36N30P
|
||
IXYS N-Kanal, MOSFET, 94 A 300 V, 3 ben, TO-247, HiperFET, Polar3 IXFH94N30P3
|
||
IXYS DSEI2X121-02A Dual Diode, Isoleret, 200V Silicon Junction, 50ns, 123A, 12-Pin SOT-227B 1.1V
|
||
IXYS MDD95-16N1B Dual Diode, Serie, 1600V Silicon Junction, 120A, 3-Pin TO-240AA 1.43V
|
||
DSEP60-06A, Omskifterdiode Silicon Junction, 3 ben, TO-247AD 2.04V
|
||
IXYS DSEI2X121-02A Dual Diode, Isoleret, 200V Silicon Junction, 50ns, 123A, 12-Pin SOT-227B 1.1V
|
||
IXYN80N90C3H1, IGBT, N-Kanal, 340 A 900 V 50kHz, 4 ben, SOT-227B Enkelt
|
||
IXYS N-Kanal, MOSFET, 26 A 1200 V, 3 ben, TO-264, HiperFET, Polar IXFK26N120P
|
Sidst søgte